? 2011 ixys corporation, all rights reserved IXGA50N60C4 ixgp50n60c4 ixgh50n60c4 v ces = 600v i c110 = 36a v ce(sat) 2.50v symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 90 a i c110 t c = 110c 36 a i cm t c = 25c, 1ms 220 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 72 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 290 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. m d mounting torque (to-220 & to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100298b(04/11) g = gate d = collector s = emitter tab = collector to-247 (ixgh) g e c c (tab) to-263 aa (ixga) g e c (tab) g c e to-220ab (ixgp) c (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 36a, v ge = 15v, note 1 1.95 2.50 v t j = 125 c 1.65 v high-gain igbts high-speed pt trench igbt features z optimized for low switching losses z international standard packages z square rbsoa advantages z easy to mount z space savings applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXGA50N60C4 ixgp50n60c4 ixgh50n60c4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter to-263 outline pins: 1 - gate 2 - drain to-220 outline 1 = gate 2 = collector 3 = emitter 4 = collector 1 = gate 2 = collector 3 = emitter symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 20 30 s c ie s 1900 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 100 pf c res 60 pf q g 113 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 13 nc q gc 44 nc t d(on) 40 ns t ri 66 ns e on 0.95 mj t d(off) 270 ns t fi 63 ns e of f 0.84 1.55 mj t d(on) 30 ns t ri 45 ns e on 1.10 mj t d(off) 210 ns t fi 96 ns e off 0.90 mj r thjc 0.43 c/w r thcs to-247 0.21 c/w to-220 0.50 c/w inductive load, t j = 125c i c = 36a, v ge = 15v v ce = 400v, r g = 10 note 2 inductive load, t j = 25c i c = 36a, v ge = 15v v ce = 400v, r g = 10 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2011 ixys corporation, all rights reserved IXGA50N60C4 ixgp50n60c4 ixgh50n60c4 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 00.511.522.53 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 9v 7v 8v 6v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 9v 10v 12v 14v 13v 8v 11v 7v 6v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 9v 7v 6v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 36a i c = 18a i c = 72a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 72 a t j = 25oc 36 a 18 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGA50N60C4 ixgp50n60c4 ixgh50n60c4 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 20 40 60 80 100 120 140 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 36a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2011 ixys corporation, all rights reserved IXGA50N60C4 ixgp50n60c4 ixgh50n60c4 fig. 12. inductive switching energy loss vs. gate resistance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 10 15 20 25 30 35 r g - ohms e off - millijoules 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 15. inductive turn-off switching times vs. gate resistance 90 95 100 105 110 115 120 125 130 135 10 15 20 25 30 35 r g - ohms t f i - nanoseconds 100 150 200 250 300 350 400 450 500 550 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 13. inductive switching energy loss vs. collector current 0 0.5 1 1.5 2 2.5 3 3.5 15 25 35 45 55 65 75 i c - amperes e off - millijoules 0 0.5 1 1.5 2 2.5 3 3.5 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 0.5 1 1.5 2 2.5 3 3.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 0.5 1 1.5 2 2.5 3 3.5 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 16. inductive turn-off switching times vs. collector current 30 50 70 90 110 130 150 15 25 35 45 55 65 75 i c - amperes t f i - nanoseconds 120 160 200 240 280 320 360 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 25oc, 125oc fig. 17. inductive turn-off switching times vs. junction temperature 50 60 70 80 90 100 110 120 130 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 160 180 200 220 240 260 280 300 320 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 72a i c = 36a
ixys reserves the right to change limits, test conditions, and dimensions. IXGA50N60C4 ixgp50n60c4 ixgh50n60c4 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 15 25 35 45 55 65 75 i c - amperes t r i - nanoseconds 10 20 30 40 50 60 70 80 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 25oc t j = 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 24 28 32 36 40 44 48 52 56 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 72a i c = 36a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 10 15 20 25 30 35 r g - ohms t r i - nanoseconds 20 30 40 50 60 70 80 90 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 36a i c = 72a ixys ref: g_50n60c4(l5)03-23-11
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